Apparatus for controlling a temperature of a microelectronics substrate

ABSTRACT

A method and apparatus for controlling a temperature of a microelectronic substrate. In one embodiment, the apparatus can include a substrate support configured to engage and support the microelectronic substrate. The apparatus can further include a temperature controller having one or more thermal links coupled directly with the substrate when the substrate is supported by the substrate support. The thermal links can maintain thermal contact with the substrate when the substrate is either stationary or mobile relative to the temperature controller. The temperature controller can heat or cool different portions of the substrate at different rates with one or more of several heat transfer devices, including liquid jets, gas jets, resistive electrical elements and/or thermoelectric elements.

TECHNICAL FIELD

The present invention relates to an apparatus and method for controllingthe temperature of a microelectronic substrate during manufacture.

BACKGROUND OF THE INVENTION

Conventional microelectronic devices can include a substrate having afront side on which semiconductor elements and other features are formedand a back side opposite the front side. One conventional technique forforming semiconductor elements and other features on the substrate is toetch selected portions of the front side of the substrate and apply asuccession of conductor, semiconductor and/or insulator layers to thesubstrate which together form the elements. In a typical operation, alayer of photosensitive etch-resistant material (resist) is applied tothe center of the substrate and the substrate is spun to distribute theresist over the substrate by centrifugal force. Selected portions of theresist are then exposed to a selected radiation while a mask covers theunselected portions. The radiation causes the selected portions tobecome soluble (in the case of a positive resist process) or insoluble(in the case of a negative resist process) when exposed to a selectedsolvent. The solvent washes away the soluble portion of the resist,leaving the remaining portion of the resist to cover selected portionsof the substrate. The exposed portions of the substrate are then etchedaway and the remaining resist is removed to leave one portion of thesubstrate recessed relative to the surrounding portions. The recessedarea can be filled (or the adjacent elevated area can be built up) withthe succession of conductor, semiconductor and/or insulator layers toform the semiconductor elements.

During the process discussed above, the resist is exposed to a criticaldose of radiation that causes the selected or exposed portion of theresist to become either soluble or insoluble. Typically, the entireresist layer is exposed to the same critical dose of radiation. However,if the thickness of the resist layer is not uniform, the critical doseof radiation may not provide the appropriate exposure level. Forexample, if the resist layer is locally thick, it may be underexposed,and may not completely change its solubility. If the resist layer islocally thin, it may be overexposed and reflections from the overexposedregions may strike adjacent regions, potentially altering the geometryof the features formed on the substrate, or causing the features tooverlap. Accordingly, it is important to maintain the resist layer at auniform thickness so that a single critical dose of radiation will havethe same effect on the entire resist layer.

One factor that controls the thickness of the resist layer is thetemperature of the semiconductor substrate on which the resist layer isdisposed. For example, where the temperature of the substrate iselevated, solvents in the resist will evaporate more rapidly, thickeningthe resist before it spins off the edge of the substrate, and causing alocal increase in resist thickness. Conversely, where the temperature ofthe substrate is depressed, solvents in the resist are less likely toevaporate before the resist spins off the substrate, resulting in alocal reduction in resist thickness.

To make semiconductor devices more compact, the size of thesemiconductor elements on the devices are made as small as possible andare positioned as closely together as possible. Accordingly, it becomesincreasingly important to control the thickness of the resist layer toensure that the selected portions of the resist layer are exposed to theproper radiation dosage so that adjacent features are well defined anddo not overlap.

One approach to controlling the distribution of the resist has been tocool the outer edge of the substrate by directing flow of rinsingsolution toward the outer periphery of the back side of the substrate.The rinsing solution can cool the wafer as the rinsing solutionevaporates, and can prevent the resist from flowing from the front sideof the substrate around the outer edge of the substrate to the back sideof the substrate. A drawback with this method is that it may notadequately control the temperature of the entire substrate, and maytherefore fail to produce a uniformly thick layer of resist on thesubstrate. For example, even a 0.5° C. change in the substratetemperature can have a large effect on the thickness of the resistlayer, and this effect may not be adequately addressed by directingrinsing solution toward the outer periphery of the substrate.

SUMMARY OF THE INVENTION

The present invention is directed toward methods and apparatuses forcontrolling the temperature of a microelectronic substrate. In oneaspect of the invention, the apparatus can include a substrate supporthaving at least one support surface for engaging and supporting thesubstrate. The apparatus can further include a temperature controllerpositioned at least proximate to the substrate support and having afirst thermal link coupled directly with a first portion of thesubstrate and a second thermal link coupled directly with a secondportion of the substrate. The first and second thermal links can beseparately controllable for transferring heat to or from the first andsecond portions of the substrate at different rates.

In one aspect of the invention, the thermal link can include a pluralityof nozzles proximate to the substrate, each nozzle having an orificedirected to a separate portion of the substrate. The nozzles can bearranged in an annular or concentric fashion to transfer heat to firstand second annular regions of the substrate at different rates. Thenozzles can direct streams of liquid or gas toward the substrate toeither heat or cool selected regions of the substrate. In another aspectof this invention, the thermal links can include electrical elementspositioned at least proximate to the substrate. The electrical elementscan include resistive electrical heaters that heat the substrate orthermoelectric devices that can either heat or cool the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partially schematic, partial cross-sectional side elevationview of an apparatus having a chill plate assembly and a coater bowlassembly in accordance with an embodiment of the invention.

FIG. 2 is a top plan view of a portion of the coater bowl assembly shownin FIG. 1.

FIG. 3 is a partially schematic, partial cross-sectional side elevationview of a chill plate assembly in accordance with another embodiment ofthe invention.

FIG. 4 is a top plan view of a portion of the chill plate assembly shownin FIG. 3.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed toward methods and apparatuses forcontrolling the temperature of a microelectronic substrate duringmanufacture. The apparatus can include a temperature controller that canvary the heat transferred to or from different portions of the substrateto keep the substrate temperature uniform, or to impose a temperaturedistribution on the substrate. Many specific details of certainembodiments of the invention are set forth in the following descriptionand in FIGS. 1-4 to provide a thorough understanding of suchembodiments. One skilled in the art, however, will understand that thepresent invention may have additional embodiments and that they may bepracticed without several of the details described in the followingdescription.

FIG. 1 is a partially schematic, partial cross-sectional side elevationview of an apparatus 10 in accordance with an embodiment of theinvention. The apparatus 10 can include a chill plate assembly 20positioned proximate to a coater bowl assembly 30. A transfer device 40,such as a robotic arm, is positioned to transfer a microelectronicsubstrate 70 between the chill plate assembly 20 and the coater bowlassembly 30. Two temperature controllers 50 (shown as a platetemperature controller 50 a and a bowl temperature controller 50 b) cancontrol the temperature of the substrate 70 when the substrate 70 ispositioned on the chill plate assembly 20 and the coater bowl assembly30, respectively.

In one embodiment, the chill plate assembly 20 can be configured totransfer heat to and/or from the substrate 70. For example, the chillplate assembly 20 can cool the substrate 70 after the substrate 70receives a coating of primer in a high temperature process.Alternatively, the chill plate assembly 20 can be used to heat thesubstrate 70, or to heat one portion of the substrate 70 while coolinganother portion. Accordingly, the plate temperature controller 50 a caninclude a fluid supply 51 a coupled with conduits 53 a to manifolds 54 apositioned proximate to the substrate 70. The manifolds 54 a can includenozzles having orifices 55 a facing the substrate 70. The fluid supply51 a can direct temperature-controlled fluid to the manifolds 54 a andthrough the orifices 55 a to form fluid streams or jets. The fluidstreams or jets can impinge on a back side 71 of the substrate 70 toprovide a plurality of thermal links between the plate temperaturecontroller 50 a and the substrate 70.

In one embodiment, the fluid supply 51 a can include a source of liquid,such as water or other liquids that are compatible with the substrate70. In another embodiment, the fluid supply 51 a can include a source ofgas, such as air, nitrogen, or other gases that are compatible with thesubstrate 70. In either case, the fluid supply 51 a can be coupled to aplurality of heat exchangers 52 a that are individually controllable todirect fluid at different temperatures to each manifold 54 a.Accordingly, the plate temperature controller 50 a can transfer heat toor from different portions of the substrate 70 at different rates.

In one aspect of this embodiment, the different heat transfer rates cangenerate a uniform temperature distribution over a front side 72 of thesubstrate 70 that initially had a non-uniform temperature distribution.For example, if the substrate 70 arrives at the chill plate assembly 20with the periphery of the front side 72 cooler than the center of thefront side 72, the plate temperature controller 50 a can be operated tocool the center of the substrate 70 more rapidly than the periphery.Alternatively, the plate temperature controller 50 a can generate anon-uniform temperature distribution on the front side 72 of thesubstrate 70 to compensate in advance for a subsequent non-uniform heattransfer process, as will be discussed in greater detail below.

In one embodiment, the substrate 70 can be positioned a selecteddistance above the orifices 55 a. Accordingly, the chill plate assembly20 can include a substrate support 21 having a plurality of stand-offs23 that provide the desired separation between the substrate 70 and theorifices 55 a. The stand-offs 23 can be spaced apart and arranged suchthat a substantial portion of the back side 71 of the substrate 70 is incontact with the thermal links provided by the temperature controller 50a. In a further aspect of this embodiment, each stand-off 23 can alsoinclude a centering guide 22 adjacent the outer edge of the substrate 70for centering the substrate, as will be described in greater detailbelow with reference to FIG. 4.

In one embodiment, the manifolds 54 a and orifices 55 a can be arrangedin an annular and/or concentric fashion with respect to each other, asshown in FIG. 1. Accordingly, the plate temperature controller 50 a canbe used to separately control the heat transferred to or from differentannular regions of the substrate 70. In other embodiments, the manifold54 a and the orifices 55 a can have other arrangements to control theheat transferred to or from regions of the substrate 70 havingnon-annular shapes. In still further embodiments, the orifices 55 a canbe positioned proximate to the front side 72 (rather than the back side71) of the substrate 70 to transfer heat directly to or from the frontside 72. An advantage of transferring heat to or from the back side 71of the substrate 70 is that such a method may be less likely to damagecomponents or features on the front side 72.

In one method of operation, the transfer device 40 moves the substrate70 from a vapor deposition chamber (not shown) to the chill plateassembly 20 for cooling. The plate temperature controller 50 a is thenactivated to cool the substrate 70. Once the substrate 70 has cooled,the transfer device 40 can retrieve the substrate 70 and move it to thecoater bowl assembly 30, where the substrate 70 is shown in phantomlines. In one embodiment, the transfer device 40 can include an arm 42having a plurality of fingers 41 that engage the back side 71 of thesubstrate 70 to lift the substrate 70 from the chill plate assembly 20.An actuator 43 coupled to the arm 42 and the fingers 41 can raise, lowerand rotate the arm 42 with the substrate 70 attached and move the arm 42and the substrate 70 to the coater bowl assembly 30.

The coater bowl assembly 30 can apply a liquid coating to the substrate70 while rotating and controlling the temperature of the substrate 70.In one embodiment, the coater bowl assembly 30 includes a liquid source37 coupled to a conduit 34. The conduit 34 terminates in a nozzle 35that directs liquid from the liquid source 37 to the upward-facing frontside 72 of the substrate 70. The substrate 70 is supported by arotatable chuck 32, such as a vacuum chuck. The chuck 32 is coupled to adrive unit 33 for rotating the substrate 70 about a rotation axis 36. Asthe substrate 70 rotates, the liquid disposed on the front side 72 ofthe substrate 70 spreads over the front side 72 by centrifugal force. Acoater bowl 31 is disposed annularly around the substrate 70 to collectliquid that runs off the edges of the substrate 70 as the substrate 70rotates.

The bowl temperature controller 50 b is coupled to the coater bowlassembly 30 to transfer heat to or away from the substrate 70 as thesubstrate 70 rotates relative to the coater bowl 31. In one embodiment,the temperature controller 50 b includes a fluid supply 51 b coupled toa single heat exchanger 52 b which is in turn coupled with a conduit 53b to a single manifold 54 b. The manifold 54 b includes a plurality oforifices 55 b disposed in a concentric, annular arrangement about therotatable chuck 32 to transfer heat to or from the substrate 70.

The heat transferred to or from the substrate 70 can be controlled byadjusting the flow rate through each of the orifices 55 b. For example,the orifices 55 b toward the periphery of the substrate 70 can besmaller than those toward the center of the substrate 70 to reduce therate of heat transfer to or from the periphery of the substrate 70.Alternatively, each of the orifices 55 a can have a variable diameterthat can be adjusted manually or via an actuator to direct the flow at aselected flow rate through each orifice 55 a. In another embodiment, thebowl temperature controller 50 b can include a plurality of heatexchangers 52 b and manifolds 54 b, arranged in a manner generallysimilar to that discussed above with reference to the plate temperaturecontroller 50 a.

In one embodiment, the coater bowl assembly 30 can also include one ormore temperature sensors positioned proximate to the front side 72 ofthe substrate 70 to detect one or more temperatures of the substrate 70.For example, as shown in FIG. 1, the coater bowl assembly 30 can includea peripheral temperature sensor 60 a aligned with the peripheral regionof the substrate 70 and a central temperature sensor 60 b aligned withthe central region of the substrate. In one embodiment, the temperaturesensors 60 a, 60 b can include infrared sensors and in otherembodiments, the temperature sensors can include other suitable devices.The temperature sensors 60 a, 60 b can be coupled to the bowltemperature controller 50 b to provide a temperature feedback loop.Accordingly, the bowl temperature controller 50 b can receive signalsfrom the temperature sensors 60 a, 60 b and adjust the heat transferrate to and/or from the substrate 70 to achieve a desired temperaturedistribution on the front side 72 of the substrate 70.

In one embodiment, for example, where the fluid dispensed through thenozzle 35 is a resist material, it may be desirable to maintain thefront side 72 of the substrate 70 at a uniform temperature, to preventsolvents in the resist material from evaporating more quickly in oneregion of the substrate 70 than another. For example, as the substrate70 rotates about the rotation axis 36, the periphery of the substrate 70will have a higher linear velocity than the center of the substrate 70,and may accordingly cool more quickly. Accordingly, in one aspect of theoperation of the apparatus 10, the bowl temperature controller 50 b cancompensate for this effect by either heating the peripheral region ofthe substrate 70 or cooling the center region of the substrate 70. As aresult, the front side 72 of the substrate 70 can be maintained at anapproximately uniform temperature, reducing the likelihood that theresist solvent will evaporate unevenly, and therefore reducing thelikelihood that the resist will locally thicken.

In an alternate method of operation, the periphery of the substrate 70can be pre-heated (or the center region of the substrate 70 can bepre-cooled) at the chill plate assembly 20 before the substrate 70 ismoved to the coater bowl assembly 30. The temperature distribution willthen tend to become uniform as the substrate 70 rotates on the coaterbowl assembly 30 and the periphery of the substrate 70 cools relative tothe center of the substrate 70. The pre-heating and/or pre-coolingoperation can be conducted in addition to or in lieu of controlling thetemperature at the coater bowl assembly 30.

As was discussed above, the coater bowl assembly 30 can dispense aresist material on the surface of the substrate 70 in accordance withone embodiment of the invention. Alternatively, the coater bowl assembly30 (or a similar, separate assembly) can be used to dispense otherfluids, such as an antireflective coating or a developing solution.Where the coater bowl assembly 30 dispenses a resist material, the bowltemperature controller 50 b can supply a resist solvent through theorifices 55 b to prevent the resist from flowing around the periphery ofthe substrate 70 and collecting on the back side 71 of the substrate 70.

FIG. 2 is a top plan view of a portion of the coater bowl assembly 30shown in FIG. 1. As shown in FIG. 2, the orifices 55 b of the coaterbowl assembly 30 can be arranged in three annular rings to transfer heatto or from three annular regions of the substrate 70. In one aspect ofthis embodiment, the orifices 55 b are arranged in a cross-arm patternto transfer heat at four evenly spaced locations within each annularregion. In other embodiments, the coater bowl assembly 30 can includemore or fewer orifices 55 b within each annular region and/or more orfewer annular regions. The orifices 55 a (FIG. 1) can be arrangedsimilarly.

FIG. 3 is a partially schematic, partial cross-sectional side elevationview of a portion of a chill plate assembly 120 in accordance withanother embodiment of the invention. The chill plate assembly 120 caninclude a temperature controller 150 having a power supply 151 coupledto a plurality of electrical elements 155. In one embodiment, theelectrical elements 155 can include resistive electrical heaters spacedapart from the substrate 70 to heat the substrate 70 directly byconduction, convection and/or radiation. Alternatively, the electricalelements 155 can include thermoelectric devices or some other deviceconfigured to heat or cool the substrate 70, depending upon thedirection in which current is applied to the devices. Suchthermoelectric devices are available from Melcor, Co., of Trenton, N.J.In one aspect of this embodiment, the substrate 70 can be spaced apartfrom the electrical elements 155 by a distance of approximately 0.13 mmand in other embodiments, the stand-off distance can be greater orlesser depending on the heat transfer characteristics of the substrate70 and the electrical elements 155. For example, in one alternateembodiment, the stand-offs 23 can be eliminated and the substrate 70 canrest directly on the electrical elements 155. In some applications, itmay be desirable to use the stand-offs 23 to avoid contaminating theback side 71 of the substrate 70.

FIG. 4 is a top plan view of the chill plate assembly 120 shown in FIG.3. As shown in FIG. 4, the electrical elements 155 can be arrangedannularly and concentrically in a manner similar to that discussed abovewith reference to the orifices 55 a, 55 b shown in FIG. 1. As is alsoshown in FIG. 4, the four centering guides 22 can be positioned aroundthe periphery of the substrate 70 to center the substrate 70 over theinnermost electrical element 155 a. Accordingly, the centering guides 22can be spaced apart from each other by a distance that is slightlygreater than the diameter of the substrate 70.

An advantage of the electrical elements 155 discussed above withreference to FIGS. 3 and 4 is that they may more uniformly transfer heatto or from the substrate 70 than does a liquid or gas jet. Conversely,an advantage of the liquid and/or gas jets discussed above withreference to FIGS. 1 and 2 is that they may more quickly transfer heatto and/or from the substrate 70.

An advantage of the apparatus and methods discussed above with referenceto FIGS. 1-4 is that they can more accurately control, adjust, and/ormaintain the temperature of the substrate 70 before and/or duringapplication of a fluid to the substrate 70. Accordingly, a fluid can bemore uniformly distributed over the front side 72 of the substrate 70.As a result, subsequent processing operations can be more accuratelycontrolled. For example, where the fluid dispensed on the front side 72of the substrate 70 is a resist material, the more uniformly distributedresist material can be more uniformly exposed to a selected radiation,producing a more uniform etch pattern and therefore more accuratelydefined semiconductor devices.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. For example, the chill plateassembly can be operated in conjunction with or independently from thecoater bowl assembly. Accordingly, the invention is not limited exceptas by the appended claims.

What is claimed is:
 1. An apparatus for controlling a temperature of amicroelectronic substrate, the substrate having a first surface and asecond surface opposite the first surface, the apparatus comprising: asubstrate support having at least one support surface for engaging andsupporting the substrate; and a temperature controller positioned atleast proximate to the substrate support, the temperature controllerhaving a first thermal link coupled with a first portion of thesubstrate and a second thermal link coupled with a second portion of thesubstrate, the first and second thermal links being separatelycontrollable for transferring heat to or from the first and secondportions at different rates and wherein the first thermal link includesa first nozzle having a first orifice directed toward the first portionof the substrate and the second thermal link includes a second nozzlehaving a second orifice directed toward the second portion of thesubstrate; and a source of liquid coupled to the first and secondnozzles, wherein the source of liquid includes a source of resistsolvent.
 2. The apparatus of claim 1 wherein the temperature controlleris fixed relative to the substrate when the substrate is supported bythe substrate support.
 3. The apparatus of claim 1 wherein at least aportion of the substrate support is rotatable relative to thetemperature controller to rotate the substrate relative to thetemperature controller when the substrate is supported by the substratesupport.
 4. The apparatus of claim 1, further comprising a liquid supplyconduit having an opening for dispensing a liquid onto the substrate. 5.The apparatus of claim 4 wherein the liquid supply conduit is positionedadjacent the first surface of the substrate when the substrate issupported by the substrate support for disposing the liquid on the firstsurface, further wherein the first and second thermal links arepositioned adjacent the second surface for transferring heat to or fromthe second surface.
 6. The apparatus of claim 1, further comprising asource of compressed gas coupled to the first and second nozzles.
 7. Theapparatus of claim 6 wherein the source of compressed gas includes asource of compressed air.
 8. The apparatus of claim 1, furthercomprising a manifold coupled to the first and second nozzles.
 9. Theapparatus of claim 1, further comprising a liquid supply coupled to aliquid supply conduit, the conduit having an opening positionedproximate to the substrate support for disposing the liquid on thesubstrate, the liquid including at least one of a resist material, anantireflective coating material, and a developing solution.
 10. Theapparatus of claim 1 wherein the first thermal link is coupled directlywith the first portion of the substrate and the second thermal link iscoupled directly with the second portion of the substrate.
 11. Theapparatus of claim 1 wherein the first thermal link includes a firstelectrical element spaced apart from the first portion of the substrateand the second thermal link includes a second electrical element spacedapart from the second portion of the substrate.
 12. The apparatus ofclaim 11 wherein the substrate support includes at least one standoffhaving an engaging surface for engaging the substrate, the engagingsurface being spaced apart from the first and second electricalelements.
 13. The apparatus of claim 11 wherein the first electricalelement includes a first thermoelectric device and the second electricalelement includes a second thermoelectric device, the thermoelectricdevices configured to generate a heating effect when current is passedthrough the devices in a first direction and a cooling effect whencurrent is passed through the devices in an opposite direction.
 14. Theapparatus of claim 1 wherein the substrate support is rotatable about arotation axis and the first thermal link is spaced apart from therotation axis by a first distance and the second thermal link is spacedapart from the rotation axis by a second distance different than thefirst distance.
 15. The apparatus of claim 1 wherein the substratesupport is rotatable about a rotation axis that extends through thefirst thermal link.
 16. The apparatus of claim 1 wherein the first andsecond thermal links are annular relative to an axis extending generallyperpendicular to at least one of the first and second surfaces of thesubstrate.
 17. The apparatus of claim 1 wherein the first and secondthermal links are concentric relative to an axis extending generallyperpendicular to at least one of the first and second surfaces of thesubstrate.
 18. The apparatus of claim 1 wherein the first thermal linkincludes a heat source.
 19. The apparatus of claim 1 wherein the firstthermal link includes a cooling source.
 20. The apparatus of claim 1wherein the substrate support includes rotatable chuck for releasablyengaging the substrate.
 21. The apparatus of claim 1 wherein thesubstrate support includes an upwardly facing bowl for retaining excessliquid that drips from the substrate.
 22. The apparatus of claim 1wherein the temperature controller includes a temperature sensor formonitoring at least one temperature of the substrate, further whereinthe temperature sensor is coupled to the first and second thermal linksto maintain the first and second portions of the substrate atapproximately the same temperature.
 23. An apparatus for controlling atemperature of a microelectronic substrate, the substrate having a firstsurface and a second surface opposite the first surface, the apparatuscomprising: a substrate support having an engaging surface positioned tosupport the substrate, the substrate support having an open portionadjacent the second surface of the substrate to allow direct thermalcontact with the second surface; a liquid supply conduit having anopening positioned proximate to the substrate support for disposing aliquid on the substrate; a source of the liquid coupled to the liquidsupply conduit, the source of liquid including at least one of a resistmaterial, an antireflective coating material and a developing solution;and a temperature controller coupled to a source of gas, the temperaturecontroller having at least one orifice proximate to the substratesupport for directing a flow of the gas directly against the secondsurface of the substrate.
 24. The apparatus of claim 23 wherein theengaging surface of the substrate support is rotatable relative to theorifice of the temperature controller to rotate the substrate relativeto the orifice.
 25. The apparatus of claim 23 wherein the orifice is afirst orifice aligned with a first portion of the substrate, the sourceof gas having a second orifice aligned with a second portion of thesubstrate, the temperature controller being controllable to transferheat at a first rate to or from the substrate through the first orifice,the temperature controller being controllable to transfer heat at asecond rate to or from the substrate through the second orifice.
 26. Theapparatus of claim 23 wherein the source of compressed gas includes asource of compressed air.
 27. The apparatus of claim 23 wherein thesource of gas has a temperature less than a temperature of the substrateto cool the substrate.
 28. The apparatus of claim 23 wherein the sourceof gas has a temperature greater than a temperature of the substrate toheat the substrate.
 29. The apparatus of claim 23 wherein the substratesupport is rotatable about a rotation axis and the first thermal link isspaced apart from the rotation axis by a first distance and the secondthermal link is spaced apart from the rotation axis by a second distancedifferent than the first distance.
 30. The apparatus of claim 23 whereinthe substrate support includes a rotatable chuck for releasably engagingthe substrate.
 31. The apparatus of claim 23 wherein the substratesupport includes an upwardly facing bowl for retaining excess fluid thatdrips from the substrate.
 32. An apparatus for controlling a temperatureof a microelectronic substrate, the substrate having a first surface anda second surface opposite the first surface, the apparatus comprising: asubstrate support having at least one support surface for engaging andsupporting the substrate; and a temperature controller positioned atleast proximate to the substrate support, the temperature controllerhaving a first thermal link coupled with a first portion of thesubstrate and a second thermal link coupled with a second portion of thesubstrate, the first and second thermal links being separatelycontrollable for transferring heat to or from the first and secondportions at different rates; and a liquid supply coupled to a liquidsupply conduit, the conduit having an opening positioned proximate tothe substrate support for disposing the liquid on the substrate, theliquid including at least one of a resist material, an antireflectivecoating material, and a developing solution.
 33. The apparatus of claim32 in the temperature controller is fixed relative to the substrate whenthe substrate is supported by the substrate support.
 34. The apparatusof claim 32 wherein at least a portion of the substrate support isrotatable relative to the temperature controller to rotate the substraterelative to the temperature controller when the substrate is supportedby the substrate support.
 35. The apparatus of claim 32 wherein theliquid supply conduit is positioned adjacent the first surface of thesubstrate when the substrate is supported by the substrate support fordisposing the liquid on the first surface, further wherein the first andsecond thermal links are positioned adjacent the second surface fortransferring heat to or from the second surface.
 36. The apparatus ofclaim 32 wherein the first thermal link includes a first nozzle having afirst orifice directed toward the first portion of the substrate and thesecond thermal link includes a second nozzle having a second orificedirected toward the second portion of the substrate.
 37. The apparatusof claim 32, further comprising a source of compressed gas coupled tothe first and second nozzles.
 38. The apparatus of claim 37 wherein thesource of compressed gas includes a source of compressed air.
 39. Theapparatus of claim 32, further comprising a manifold coupled to thefirst and second nozzles.
 40. The apparatus of claim 32, furthercomprising a source of liquid coupled to the first and second nozzles.41. The apparatus of claim 40 wherein the source of liquid includes asource of resist solvent.
 42. The apparatus of claim 32 wherein thefirst thermal link is coupled directly with the first portion of thesubstrate and the second thermal link is coupled directly with thesecond portion of the substrate.
 43. The apparatus of claim 32 whereinthe first thermal link includes a first electrical element spaced apartfrom the first portion of the substrate and the second thermal linkincludes a second electrical element spaced apart from the secondportion of the substrate.
 44. The apparatus of claim 43 wherein thesubstrate support includes at least one offset having an engagingsurface for engaging the substrate, the engaging surface being spacedapart from the first and second electrical elements.
 45. The apparatusof claim 43 wherein the first electrical element includes a firstthermoelectric device and the second electrical element includes asecond thermoelectric device, the thermoelectric devices configured togenerate a heating effect when current is passed through the devices ina first direction and a cooling effect when current is passed throughthe devices in an opposite direction.
 46. The apparatus of claim 32wherein the substrate support is rotatable about a rotation axis and thefirst thermal link is spaced apart from the rotation axis by a firstdistance and the second thermal link is spaced apart from the rotationaxis by a second distance different than the first distance.
 47. Theapparatus of claim 32 wherein the substrate support is rotatable about arotation axis that extends through the first thermal link.
 48. Theapparatus of claim 32 wherein the first and second thermal links areannular relative to an axis extending generally perpendicular to atleast one of the first and second surfaces of the substrate.
 49. Theapparatus of claim 32 wherein the first and second thermal links areconcentric relative to an axis extending generally perpendicular to atleast one of the first and second surfaces of the substrate.
 50. Theapparatus of claim 32 wherein the first thermal link includes a heatsource.
 51. The apparatus of claim 32 wherein the first thermal linkincludes a cooling source.
 52. The apparatus of claim 32 wherein thesubstrate support includes rotatable chuck for releasably engaging thesubstrate.
 53. The apparatus of claim 32 wherein the substrate supportincludes an upwardly facing bowl for retaining excess fluid that dripsfrom the substrate.
 54. The apparatus of claim 32 wherein thetemperature controller includes a temperature sensor for monitoring atleast one temperature of the substrate, further wherein the temperaturesensor is coupled to the first and second thermal links to maintain thefirst and second portions of the substrate at approximately the sametemperature.